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2026
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Spin-Dependent Transport in One-Dimensional Mercury- and Silver-Mediated DNA Nanowires
A. De, W. Livernois, S. Vecchioni, Y. P. Ohayon, and M. P. Anantram, arXiv:2610.31508 (2026)
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Scalable Force Fields for Metal-Mediated DNA Nanostructures
W. Livernois, O. Alolaiyan, A. De, and M.P. Anantram, JCTC, Volume 22, Issue 4, Pages 2000-2012 (2026)
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Electrical control of a metal-mediated DNA memory
B. Liu, B. Lu, A. De, K. Kim, L. Perren, K. Woloszyn, G. Petrova, R. Li, C-F. Yang, C. Mao, A. S. Botana, Y. P. Ohayon, J. W. Canary, R. Sha, M.P. Anantram, S. Vecchioni, and J. Hihath, Matter, Volume 9, Issue 1, Article 102470 (2026)
2025
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Artificial synapse with tunable dynamic range for neuromorphic computing with ion intercalated bilayer graphene
Y. He, P. Cao, S. Hashemkhani, Y. Liu, D. Vaz, K. Joy, N. Youngblood, R. Kubendran, M.P. Anantram, and F. Xiong, npj Unconventional Computing, Volume 2, Issue 1, Article 2:28 (2025)
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Topological Matter: A Unified Perspective on Real and Momentum Space
S. Vecchioni, P. Singh, A. De, M. Chapa, V. R. Singh, K. Woloszyn, R. Liu, B. Liu, C-F. Yang, Y. P. Ohayon, R. Sha, J. W. Canary, J. Hihath, M. P. Anantram, and A. S. Botana; Chemrxiv
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Conformation driven conductance modulation in single-stranded RNA (ssRNA)
A. De, A. K. Das, and M. P. Anantram, Nanoscale Horizons, Volume 10, Issue 9, Pages 2080-2093 (2025)
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Electromechanical switching in DNA-CNT supramolecular structures
O. Alolaiyan, A. De, and M. P. Anantram, Applied Physics Letters, Volume 127, Issue 2, Article 023505 (2025)
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Transmetalation for DNA-based Molecular Electronics
A. De, B. Lu, Y. P. Ohayon, K. Woloszyn, W. Livernois, L. Perren, C-F. Yang, C. Mao, A. S. Botana, J. Hihath, J. W. Canary, R. Sha, M. P. Anantram, and S. Vecchioni, Small, Volume 21, Issue 25, Article 2411518 (2025)
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DNA conductance modulation via aptamer binding
H. Mohammad, L. Alsaleh, A. Alotaibi, O. Alolaiyan, T. Takahashi, M. P. Anantram, and T. Nishino, Nanoscale, Volume 17, Issue 13, Pages 8035-8046 (2025)
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A ML Framework for Genetic Sequence Identification Using 2D Electrical Conductance Probability Distributions from Mixed Data Sets
Y. Wang, H. Wang, A. Das, and M. P. Anantram, IEEE Transactions on Computational Biology and Bioinformatics, Volume 22, Number 2, Pages 790-799 (2025)
2024
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Ion detection in a DNA nanopore FET device
W. Livernois, S. Cao, S. Saha, Q. Ding, A. Gopinath, and M. P. Anantram, Nanotechnology, Volume 35, Number 32, Article 325202 (2024)
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Electronic Properties of DNA Origami Nanostructure Revealed by In Silico Calculations
B. Demir, C. A. Gultakti, Z. Koker, M. P. Anantram, and E. E. Oren, The Journal of Physical Chemistry B, Volume 128, Issue 19, Pages 4646-4654 (2024)
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Identifying SARS-CoV-2 Variants Using Single-Molecule Conductance Measurements
Z. Aminiranjbar, C. A. Gultakti, M. N. Alangari, Y. Wang, B. Demir, Z. Koker, A. K. Das, M. P. Anantram, E. E. Oren, and J. Hihath, ACS Sensors, Volume 9, Issue 6, Pages 2888-2896 (2024)
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Advancing Semiconductor Manufacturing through DNA-Templated Lithography and Molecular-Scale Patterning of 2D Materials
A. Kumari, M. Curtis, A. De, H. Liu, D. Estrada, and M. P. Anantram, 2024 IEEE Workshop on Microelectronics and Electron Devices (WMED), Boise, ID, USA, Pages 1-4 (2024)
2023
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A Spin-Dependent Model for Multi-Heme Bacterial Nanowires
W. Livernois and M. P. Anantram, ACS Nano, Volume 17, Issue 10, Pages 9059–9068 (2023)
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Charge transport through DNA with energy-dependent decoherence
H. Mohammad and M. P. Anantram, Physical Review E, Volume 108, Issue 4, Article 044403 (2023)
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Performance analysis of DNA crossbar arrays for high-density memory storage applications
A. De, H. Mohammad, Y. Wang, R. Kubendran, A. K. Das, and M. P. Anantram, Scientific Reports, Volume 13, Issue 1, Article 13:6650 (2023)
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Computational study of the role of counterions and solvent dielectric in determining the conductance of B-DNA
Y. Wang, B. Demir, H. Mohammad, E. E. Oren, and M. P. Anantram, Physical Review E, Volume 107, Issue 4, Article 044403 (2023)
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DNA–Au (111) interactions and transverse charge transport properties for DNA-based electronic devices
B. Demir, H. Mohammad, M. P. Anantram, and E. E. Oren, Physical Chemistry Chemical Physics, Volume 25, Issue 24, Pages 16570-16577 (2023)
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DNA nanopores as artificial membrane channels for bioprotonics
L. Luo, S. Manda, Y. Park, B. Demir, J. Sanchez, M. P. Anantram, E. E. Oren, A. Gopinath, and M. Rolandi, Nature Communications, Volume 14, Issue 1, Article 14:5364 (2023)
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Metal-Mediated DNA Nanotechnology in 3D: Structural Library by Templated Diffraction
S. Vecchioni, B. Lu, W. Livernois, Y. P. Ohayon, J. B. Yoder, C-F. Yang, K. Woloszyn, W. Bernfield, M. P. Anantram, J. W. Canary, W. A. Hendrickson, L. J. Rothschild, C. Mao, S. J. Wind, N. C. Seeman, and R. Sha, Advanced Materials, Volume 35, Issue 29, Article 2210938 (2023)
2022
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Modeling and Simulation of DNA Origami based Electronic Read-only Memory
A. De, H. Mohammad, Y. Wang, R. Kubendran, A. K. Das, and M. P. Anantram, 2022 IEEE 22nd International Conference on Nanotechnology (NANO), Palma de Mallorca, Spain, Pages 385-388 (2022)
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Classification of DNA Sequences: Performance Evaluation of Multiple Machine Learning Methods
Y. Wang, V. Khandelwal, A. K. Das, and M. P. Anantram, 2022 IEEE 22nd International Conference on Nanotechnology (NANO), Palma de Mallorca, Spain, Pages 333-336 (2022)
2021
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Quantum Transport in DNA Heterostructures: Implications for Nanoelectronics
S. R. Patil, H. Mohammad, V. Chawda, N. Sinha, R. K. Singh, J. Qi, and M. P. Anantram, ACS Applied Nano Materials, Volume 4, Issue 10, Pages 10029-10037 (2021)
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A machine learning approach for accurate and real-time DNA sequence identification
Y. Wang, M. Alangari, J. Hihath, A. K. Das, and M. P. Anantram, BMC Genomics, Volume 22, Issue 1, Article 22:525 (2021)
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Role of intercalation in the electrical properties of nucleic acids for use in molecular electronics
H. Mohammad, B. Demir, C. Akin, B. Luan, J. Hihath, E. E. Oren, and M. P. Anantram, Nanoscale Horizons, Volume 6, Issue 8, Pages 651-660 (2021)
2020
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Mechanism for Unipolar Reset in Negative Thermophoresis Resistive Memory Devices
X. Xu and M. P. Anantram, IEEE Transactions on Electron Devices, Volume 67, Number 12, Pages 5815-5818 (2020)
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Molecular Control of Charge Carrier and Seebeck Coefficient in Hybrid Two-Dimensional Nanoparticle Superlattices
C. E. McCold, L. Domulevicz, Z. Cai, W-Y. Lo, S. Hihath, K. March, H. M. Mohammad, M. P. Anantram, L. Yu, and J. Hihath, The Journal of Physical Chemistry C, Volume 124, Issue 1, Pages 17-24 (2020)
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Kinetic Monte Carlo Simulation of Interface-Controlled Hafnia-Based Resistive Memory
X. Xu, B. Rajendran, and M. P. Anantram, IEEE Transactions on Electron Devices, Volume 67, Number 1, Pages 118-124 (2020)
2018
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Detection and identification of genetic material via single-molecule conductance
Y. Li, J. M. Artés, B. Demir, S. Gokce, H. M. Mohammad, M. Alangari, M. P. Anantram, E. E. Oren, and J. Hihath, Nature Nanotechnology, Volume 13, Issue 12, Pages 1167-1173 (2018)
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Engineering of the resistive switching properties in V2O5 thin film by atomic structural transition: Experiment and theory
Z. Wan, H. Mohammad, Y. Zhao, C. Yu, R. B. Darling, and M. P. Anantram, Journal of Applied Physics, Volume 124, Issue 10, Article 105301 (2018)
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Impact of doping on bonding energy hierarchy and melting of phase change materials
J. Liu, E. Wang, Y. Zhao, X. Xu, J-S. Moon, and M. P. Anantram, Journal of Applied Physics, Volume 124, Issue 9, Article 094503 (2018)
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Bipolar Resistive Switching Characteristics of Thermally Evaporated V2O5 Thin Films
Z. Wan, H. Mohammad, Y. Zhao, R. B. Darling, and M. P. Anantram, IEEE Electron Device Letters, Volume 39, Number 9, Pages 1290-1293 (2018)
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Nanoink bridge-induced capillary pen printing for chemical sensors
S-J. Kahng, C. Cerwyn, B. M. Dincau, J-H. Kim, I. V. Novosselov, M. P. Anantram, and J-H. Chung, Nanotechnology, Volume 29, Number 33, Article 335304 (2018)
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Gunn-Hilsum Effect in Mechanically Strained Silicon Nanowires: Tunable Negative Differential Resistance
D. Shiri, A. Verma, R. Nekovei, A. Isacsson, C. R. Selvakumar, and M. P. Anantram, Scientific Reports, Volume 8, Issue 1, Article 8:6273 (2018)
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Reversible phase-change behavior in two-dimensional antimony telluride (Sb2Te3) nanosheets
R. B. Jacobs-Gedrim, M. T. Murphy, F. Yang, N. Jain, M. Shanmugam, E. S. Song, Y. Kandel, P. Hesamaddin, H. Y. Yu, M. P. Anantram, D. B. Janes, and B. Yu, Applied Physics Letters, Volume 112, Issue 13, Article 133101 (2018)
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Analysis of electrical-field-dependent Dzyaloshinskii-Moriya interaction and magnetocrystalline anisotropy in a two-dimensional ferromagnetic monolayer
J. Liu, M. Shi, J. Lu, and M. P. Anantram, Physical Review B, Volume 97, Issue 5, Article 054416 (2018)
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Extenuated interlayer scattering in double-layered graphene/hexagonal boron nitride heterostructure
N. Jain, F. Yang, R. B. Jacobs-Gedrim, X. Xu, M. P. Anantram, and B. Yu, Carbon, Volume 126, Pages 17-22 (2018)
2017
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A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure
Z. Wan, R. B. Darling, A. Majumdar, and M. P. Anantram, Applied Physics Letters, Volume 111, Issue 4, Article 041601 (2017)
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Photo absorption enhancement in strained silicon nanowires: An atomistic study
D. Shiri, M. G. Rabbani, J. Qi, A. K. Buin, and M. P. Anantram, Journal of Applied Physics, Volume 122, Number 3, Article 034302 (2017)
2016
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Moderate bending strain induced semiconductor to metal transition in Si nanowires
M. G. Rabbani, S. R. Patil, and M. P. Anantram, Semiconductor Science and Technology, Volume 31, Number 12, Article 125019 (2016)
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Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering
Y. Zhao, Z. Wan, U. Hetmanuik, and M. P. Anantram, IEEE Electron Device Letters, Volume 37, Number 9, Pages 1242-1245 (2016)
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Nested dissection solver for transport in 3D nano-electronic devices
Y. Zhao, U. Hetmaniuk, S. R. Patil, J. Qi, and M. P. Anantram, Journal of Computational Electronics, Volume 15, Issue 2, Pages 708-720 (2016)
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Comparing Charge Transport in Oligonucleotides: RNA:DNA Hybrids and DNA Duplexes
Y. Li, J. M. Artés, J. Qi, I. A. Morelan, P. Feldstein, M. P. Anantram, and J. Hihath, Journal of Physical Chemistry Letters, Volume 7, Issue 10, Pages 1888–1894 (2016)
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Photon-Induced Negative Capacitance in Metal Oxide Semiconductor Structures
A. F. Roudsari, I. Khodadad, S. S. Saini, and M. P. Anantram, IEEE Transactions on Nanotechnology, Volume 15, Number 5, Pages 715-719 (2016)
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Tailoring optical absorption in silicon nanostructures from UV to visible light: A TDDFT study
W. M. I. Hassan, M. P. Anantram, R. Nekovei, M. M. Khader, and A. Verma, Solar Energy, Volume 126, Pages 44-52 (2016)
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Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires
M. G. Rabbani, S. R. Patil, A. Verma, J. E. Villarreal, B. A. Korgel, R. Nekovei, M. M. Khader, R. B. Darling, and M. P. Anantram, Nanotechnology, Volume 27, Number 4, Article 045201 (2016)
2015
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Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film
Z. Wan, R. B. Darling, and M. P. Anantram, Physical Chemistry Chemical Physics, Volume 17, Issue 45, Pages 30248-30254 (2015)
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Conformational Gating of DNA Conductance
J. M. Artés, Y. Li, J. Qi, M. P. Anantram, and J. Hihath, Nature Communications, Volume 6, Issue 1, Article 6:8870 (2015)
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The role of cytosine methylation on charge transport through a DNA strand
J. Qi, N. Govind, and M. P. Anantram, The Journal of Chemical Physics, Volume 143, Issue 9, Article 094306 (2015)
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Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
Y. Zhao, Z. Wan, X. Xu, S. R. Patil, U. Hetmaniuk, and M. P. Anantram, Scientific Reports, Volume 5, Issue 1, Article 5:10712 (2015)
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A Reduced-Order Method for Coherent Transport Using Green's Functions
U. Hetmaniuk, D. Ji, Y. Zhao, and M. P. Anantram, IEEE Transactions on Electron Devices, Volume 62, Number 3, Pages 736-742 (2015)
2014
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Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells
M. G. Rabbani, A. Verma, M. M. Adachi, J. P. Sundararajan, M. M. Khader, R. Nekovei, and M. P. Anantram, Solar Energy Materials and Solar Cells, Volume 130, Pages 456-465 (2014)
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Conduction in alumina with atomic scale copper filaments
X. Xu, J. Liu, and M. P. Anantram, Journal of Applied Physics, Volume 116, Issue 16, Article 163701 (2014)
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Role of inelastic electron-phonon scattering in electron transport through ultra-scaled amorphous phase change material nanostructures
J. Liu, X. Xu, and M. P. Anantram, Journal of Computational Electronics, Volume 13, Issue 3, Pages 620-626 (2014)
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Subthreshold Electron Transport Properties of Ultrascaled Phase Change Memory
J. Liu, X. Xu, and M. P. Anantram, IEEE Electron Device Letters, Volume 35, Issue 5, Pages 533-535 (2014)
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A multi-scale analysis of the crystallization of amorphous germanium telluride using ab initio simulations and classical crystallization theory
J. Liu, X. Xu, L. Brush, and M. P. Anantram, Journal of Applied Physics, Volume 115, Issue 2, Article 023513 (2014)
2013
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Modeling of electron transport in biomolecules: Application to DNA
M. P. Anantram and J. Qi, 2013, IEEE International Electron Devices Meeting, Washington, DC, USA, Article 32.3 (2013)
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H+-type and OH−-type biological biomolecules semiconductors and complementary devices
Y. Deng, E. Josberger, J. Jin, A. F. Rousdari, B. A. Helms, C. Zhong, M. P. Anantram, and M. Rolandi, Scientific Reports, Volume 3, Issue 1, Article 3:2481 (2013)
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A nested dissection approach to modeling transport in nanodevices: Algorithms and applications
U. Hetmaniuk, Y. Zhao, and M. P. Anantram, International Journal for Numerical Methods in Engineering, Volume 95, Issue 7, Pages 587-607 (2013)
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Core-shell silicon nanowire solar cells
M. M. Adachi, K. S. Karim, and M. P. Anantram, Scientific Reports, Volume 3, Issue 1, Article 3:1546 (2013)
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Low-bias electron transport properties of germanium telluride ultrathin films
J. Liu and M. P. Anantram, Journal of Applied Physics, Volume 113, Issue 6, Article 063711 (2013)
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Unified model for conductance through DNA with the Landauer-Buttiker formalism
J. Qi, N. Edirisinghe, M. G. Rabbani, and M. P. Anantram, Physical Review B, Volume 87, Issue 8, Article 085404 (2013)
2012
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Reversible Modulation of Spontaneous Emission by Strain in Silicon Nanowires
D. Shiri, A. Verma, C. R. Selvakumar, and M. P. Anantram, Scientific Reports, Volume 2, Issue 1, Article 00461 (2012)
2011
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A polysaccharide bioprotonic field-effect transistor
C. Zhong, Y. Deng, A. F. Roudsari, A. Kapetanovic, M. P. Anantram, and M. Rolandi, Nature Communications, Volume 2, Issue 1, Article 2:476 (2011)
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Scaling Analysis of Nanowire Phase-Change Memory
J. Liu, B. Yu, and M. P. Anantram, IEEE Electron Device Letters, Volume 32, Issue 10, Pages 1340-1342 (2011)
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High-Gain Multiple-Gate Photodetector with Nanowires in the Channel
A. F. Roudsari, S. S. Saini, N. O, and M. P. Anantram, IEEE Electron Device Letters, Volume 32, Issue 3, Pages 357-359 (2011)
2010
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Optical Properties of Crystalline-Amorphous Core–Shell Silicon Nanowires
M. M. Adachi, M. P. Anantram, and K. S. Karim, Nano Letters, Volume 10, Issue 10, Pages 4093-4098 (2010)
2009
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High-field hole transport in silicon nanowires
A. Verma, A. K. Buin, and M. P. Anantram, Journal of Applied Physics, Volume 106, Issue 11, Article 113713 (2009)
2008
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Ballistic Quantum Simulators for Studying Variability in Nanotransistors
A. Martinez, J. R. Barker, A. Svizhenko, A. Anantram, M. Bescond, and A. Asenov, Journal of Computational and Theoretical Nanoscience, Volume 5, Pages 2289-2310 (2008)
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Carrier-phonon interaction in small cross-sectional silicon nanowires
A. K. Buin, A. Verma, and M. P. Anantram, Journal of Applied Physics, Volume 104, Issue 5, Article 053716 (2008)
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Strain induced change of bandgap and effective mass in silicon nanowires
D. Shiri, Y. Kong, A. Buin, and M. P. Anantram, Applied Physics Letters, Volume 93, Issue 7, Article 073114 (2008)
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Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon
A. K. Buin, A. Verma, A. Svizhenko, and M. P. Anantram, Nano Letters, Volume 8, Issue 2, Pages 760-765 (2008)
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Modeling of Nanoscale Devices
M. P. Anantram, M. S. Lundstrom, and D. E. Nikonov, Proceedings of the IEEE, Volume 96, Issue 9, Pages 1511-1550 (2008)
2007
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Multidimensional modeling of nanotransistors
M. P. Anantram and A. Svizhenko, IEEE Transactions on Electron Devices, Volume 54, Number 9, Pages 2100-2115 (2007)
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A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs
A. Martinez, M. Bescond, J. R. Barker, A. Svizhenko, M. P. Anantram, C. Millar, and A. Asenov, IEEE Transactions on Electron Devices, Volume 54, Number 9, Pages 2213-2222 (2007)
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The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study
A. Martinez, J. R. Barker, A. Svizhenko, M. P. Anantram, and A. Asenov, IEEE Transactions on Nanotechnology, Volume 6, Number 4, Pages 438-445 (2007)
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Developing a full 3D NEGF simulator with random dopant and interface roughness
A. Martinez, J. R. Barker, A. Asenov, A. Svizhenko, and M. P. Anantram, Journal of Computational Electronics, Volume 6, Issue 1, Pages 215-218 (2007)
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Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors
S. O. Koswatta, S. Hasan, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, IEEE Transactions on Electron Devices, Volume 54, Number 9, Pages 2339-2351 (2007)
2006
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Physics of carbon nanotube electronic devices
M. P. Anantram and F. Léonard, Reports of Progress in Physics, Volume 69, Number 3, Pages 507-561 (2006)
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Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias
S. O. Koswatta, S. Hasan, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, Applied Physics Letters, Volume 89, Issue 2, Article 023125 (2006)
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Influence of defects on nanotube transistor performance
N. Neophytou, D. Kienle, E. Polizzi, and M. P. Anantram, Applied Physics Letters, Volume 88, Issue 24, Article 242106 (2006)
2005
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Inter-base Electronic Coupling for transport through DNA
H. Mehrez and M. P. Anantram, Physical Review B, Volume 71, Issue 11, Article 115405 (2005)
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Electronic properties of O2-doped DNA
H. Mehrez, S. Walch, and M. P. Anantram, Physical Review B, Volume 72, Issue 3, Article 035441 (2005)
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Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation
H. Tsuchiya, A. Svizhenko, M. P. Anantram, M. Ogawa, and T. Miyoshi, Journal of Computational Electronics, Volume 4, Issue 1, Pages 35-38 (2005)
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Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors
S. O. Koswatta, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, Applied Physics Letters, Volume 87, Issue 25, Article 253107 (2005)
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Effect of scattering and contacts on current and electrostatics in carbon nanotubes
A. Svizhenko and M. P. Anantram, Physical Review B, Volume 72, Issue 8, Article 085430 (2005)
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Analysis of band-gap formation in squashed armchair carbon nanotubes
H. Mehrez, A. Svizhenko, M. P. Anantram, M. Elstner, and T. Fraunheim, Physical Review B, Volume 71, Issue 15, Article 155421 (2005)
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Ballistic Transport and Electrostatics in Metallic Carbon Nanotubes
A. Svizhenko, M. P. Anantram, and T. R. Govindan, Volume 4, Number 5, Pages 557-562 (2005)
2004
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Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green’s Function Formalism
J. Guo, S. Datta, M. P. Anantram, and M. Lundstrom, Journal of Computational Electronics, Volume 3, Issue 3, Pages 373-377 (2004)
2003
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Influence of counter-ion-induced disorder in DNA conduction
C. Adessi and M. P. Anantram, Applied Physics Letters, Volume 82, Pages 2353-2355 (2003)
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Environment and structure influence on DNA conduction
C. Adessi, S. Walch, and M. P. Anantram, Physical Review B, Volume 67, Issue 8, Article 081405 (2003)
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Role of Scattering in Nanotransistors
A. Svizhenko and M. P. Anantram, IEEE Transactions on Electron Devices, Volume 50, Number 6, Pages 1459-1466 (2003)
2002
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Bonding Geometry and Bandgap Changes of Carbon Nanotubes Under Uniaxial and Torsional Strain
L. Yang, J. Han, M. P. Anantram, and R. L. Jaffe, Computer Modeling in Engineering & Sciences, Volume 3, Number 5, Pages 675-685 (2002)
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Two-dimensional quantum mechanical modeling of nanotransistors
A. Svizhenko, M. P. Anantram, T. R. Govindan, B. Biegel, and R. Venugopal, Journal of Applied Physics, Volume 91, Number 4, Pages 2343-2354 (2002)
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Atomistic simulations with carbon nanotubes-classical, quantum, and transport modeling
A. Maiti, J. Andzelm, A. Svizhenko, M. P. Anantram, and M. Panhuis, Physica Status Solidi B (Germany), Volume 233, Number 1, Pages 49-58 (2002)
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Electronic Transport through Carbon Nanotubes: Effects of Structural Deformation and Tube Chirality
A. Maiti, A. Svizhenko, and M. P. Anantram, Physical Review Letters, Volume 88, Number 12, 126805 (2002)
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Single particle transport through carbon nanotube wires: Effect of defects and polyhedral cap
M. P. Anantram and T. R. Govindan, Science and Application of Nanotubes, Pages 137-149 (2002)
2001
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Nanotubes in nanoelectronics: transport, growth and modeling
M. P. Anantram, L. Delzeit, A. Cassell, J. Han, and M. Meyyappan, Physica E, Volume 11, Issues 2-3, Pages 118-125 (2001)
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Resonant versus anti-resonant tunneling at carbon nanotube A-B-A heterostructures
N. Mingo, L. Yang, J. Han, and M. P. Anantram, Physica Status Solidi B, Volume 226, Issue 1, Pages 79-85 (2001)
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Potential drop along carbon nanotube devices with current flow
N. Mingo, J. Han, M. P. Anantram, and L. Yang, Surface Science, Volumes 482-485, Part 2, Pages 1130-1134 (2001)
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Which nanowire couples better electrically to a metal contact: Armchair or zigzag nanotube?
M. P. Anantram, Applied Physics Letters, Volume 78, Issue 14, Pages 2055-2057 (2001)
2000
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Current-carrying capacity of carbon nanotubes
M. P. Anantram, Physical Review B, Volume 62, Number 8, Pages 4837-4840 (2000)
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Coupling of carbon nanotubes to metallic contacts
M. P. Anantram, S. Datta, and Y. Xue, Physical Review B, Volume 61, Number 20, Pages 14219-14224 (2000)
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Transmission through nanotubes with polyhedral caps
M. P. Anantram and T. R. Govindan, Physical Review B, Volume 61, Number 7, Pages 5020-5025 (2000)
1999
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Band-gap change of carbon nanotubes: Effect of small uniaxial and torsional strain
L. Yang, M. P. Anantram, J. Han, and J. P. Lu, Physical Review B, Volume 60, Number 19, Pages 13874-13878 (1999)
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Spatially Correlated Qubit Errors and Burst-Correcting Quantum Codes
F. Vatan, V. P. Roychowdhury, and M. P. Anantram, IEEE Transactions on Information Theory, Volume 45, Issue 5, Pages 1703-1708 (1999)
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Metastable states and information propagation in a 1D array of locally-coupled bistable cells
M. P. Anantram and V. P. Roychowdhury, Journal of Applied Physics, Volume 85, Issue 3, Pages 1622-1625 (1999)
1998
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Conductance in carbon nanotubes with defects: A numerical study
M. P. Anantram and T. R. Govindan, Physical Review B, Volume 58, Number 8, Page 4882-4887 (1998)
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Observation and modeling of single-wall carbon nanotube bend junctions
J. Han, M. P. Anantram, R. L. Jaffe, J. Kong, and H. Dai, Physical Review B, Volume 57, Number 23, Pages 14983-14989 (1998)
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Transport in (10,10) Carbon Nanotubes with Defects: A numerical study
M. P. Anantram, J. Han, and T. R. Govindan, Annals of the New York Academy of Sciences,Volume 852, Pages 169-177 (1998)
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Charging effects in the alternating-current conductance of a double-barrier resonant tunneling structure
M. P. Anantram, Journal of Physics: Condensed Matter, Volume 10, Number 40, Pages 9015-9027 (1998)
1997
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Fundamental issues in atomic/nanoelectronic computation
M. P. Anantram and V. P. Roychowdhury, In: Paulraj, A., Roychowdhury, V., Schaper, C.D. (eds) Communications, Computation, Control, and Signal Processing, Pages 309-329
1996
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Scattering Theory of Mesoscopic Superconductors
S. Datta, P. F. Bagwell, and M. P. Anantram, Physics of Low Dimensional Structures Volume 3, Page 1 (1996)
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Current fluctuations in mesoscopic systems with Andreev scattering
M. P. Anantram and S. Datta, Physical Review B, Volume 53, Number 24, Pages 16390-16402 (1996)
1995
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Effect of phase breaking on the ac response of mesoscopic systems
M. P. Anantram and S. Datta, Physical Review B, Volume 51, Number 12, Pages 7632-7639 (1995)
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Resonant Tunneling Devices: Effect of Scattering
S. Datta, G. Klimeck, R. K. Lake, and M. P. Anantram, Inst. Phys. Conf. Ser., Number 141, Chapter 7, Pages 775-780 (1995)
1993
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Rate equations for the phonon peak in resonant-tunneling structures
R. Lake, G. Klimeck, M. P. Anantram, and S. Datta, Physical Review B, Volume 48, Issue 20, Page 15132-15137 (1993)
1992
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Steady-state transport in mesoscopic systems illuminated by alternating fields
S. Datta and M. P. Anantram, Physical Review B, Volume 45, Issue 23, Page 13761-13764 (1992)
Manuscripts
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Modeling the Electronic Properties of Metallo-DNA Nanowires
A. De, P. Singh, W. Livernois, S. Vecchioni, R. Sha, J. W. Canary, and M. P. Anantram, (Submitted to IEEE)
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Patents
Nucleic Acid-based Electrically Readable, Read-only Memory
This patent describes a novel memory technology that utilizes DNA as a medium for electrically readable, read-only memory applications. The approach leverages the unique properties of DNA for data storage, potentially leading to advancements in data density and stability compared to traditional memory technologies. The innovation aims to enhance the efficiency and capacity of memory devices in the digital landscape.
Google Patents Link: https://patents.google.com/patent/US20220005870A1/en
Photodetector Cell and Solar Panel with Dual Metal Contacts
This patent outlines a design for a photodetector cell and solar panel that incorporates dual metal contacts to improve performance. The dual-contact configuration enhances the efficiency of light absorption and charge collection, making it suitable for various applications in renewable energy and photodetection. The technology aims to optimize energy conversion processes, contributing to more effective solar energy solutions.
Google Patents Link: https://patents.google.com/patent/US20180261705A1/en
Strain Modulated Nanostructures for Optoelectronic Devices
This patent presents a method for creating strain-modulated nanostructures that enhance the performance of optoelectronic devices. By manipulating strain within nanostructures, the invention aims to improve the efficiency and functionality of devices such as photodetectors and light-emitting diodes. This innovation has significant implications for advancing optoelectronic technologies and their applications in communication and sensing.
Google Patents Link: https://patents.google.com/patent/US9065253B2/en
Software
MolTran
MolTran is a computational tool developed to calculate transport properties in molecular systems while accounting for decoherence effects. This software allows researchers to analyze how environmental interactions influence electronic transport, which is crucial for understanding molecular electronics. The code is particularly useful for studying multi-terminal devices and provides insights into the efficiency of quantum transport in disordered materials.
glessUW
GlessUW is a nanodevice simulation software released by CoMotion at the University of Washington, designed to facilitate the modeling and analysis of nano-scale devices. The software offers tools for simulating various physical phenomena in nanotechnology, making it a valuable resource for researchers and engineers in the field. Its public release enhances accessibility for academic and industrial applications, promoting further innovation in nanodevice research.
Two-dimensional Quantum Simulator
The Two-dimensional Quantum Simulator, developed at NASA’s Ames Research Center, is a public release software that enables the simulation of quantum mechanical systems in two dimensions. This tool is designed for researchers exploring quantum phenomena and their applications in technology, providing a platform to model and analyze quantum behavior effectively. Its capabilities support advancements in fields such as quantum computing and materials science.
NanoFET
NanoFET is a simulation tool created to model the electrical characteristics of nanoscale field-effect transistors. This software, available on NanoHub, allows users to explore the performance of various nanodevice architectures and their potential applications in future electronics. By providing a platform for detailed analysis, NanoFET aids researchers in optimizing device designs for improved functionality and efficiency.