Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias

Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias, S. O. Koswatta, S. Hasan, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, Applied Physics Letters, Volume 89, Issue 2, Article 023125 (2006)