The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study

doi:10.1109/TNANO.2007.899638

University of Washington Electrical & Computer Engineering

Anantram Research Group

The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study

The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study, A. Martinez, J. R. Barker, A. Svizhenko, M. P. Anantram, and A. Asenov, IEEE Transactions on Nanotechnology, Volume 6, Number 4, Pages 438-445 (2007)

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